A Substrate Isolated LDO for an Inductively Powered Retinal Implant.

نویسندگان

C Brendler

N Pour Aryan

V Rieger

S Klinger

A Rothermel

چکیده

A substrate isolated LDO for an inductively powered retinal implant to generate a negative substrate voltage of −2V out of a more negative rectified voltage down to −7V is presented. Due to the fact that the negative rectified input voltage is negative relative to substrate, the LDO has to be completely isolated against substrate. The LDO has an Open Loop Gain of 66dB and a PSRR of −81dB at low frequencies. The process used is a 350nm High Voltage BiCMOS technology.

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